- that
TFETs using InAs-GaSb may have a
subthreshold swing of 33 mV/decade
under ideal conditions. The use of van der
Waals heterostructures for
TFETs were...
-
other vertical transistors,
complementary FET (CFET),
stacked FET,
vertical TFETs,
FinFETs with III-V
semiconductor materials (III-V FinFET),
several kinds...
-
capable of
higher operating currents than
previous designs. The
first III–V
TFET designs were
demonstrated in 2009 by a
joint team from
Cornell University...
- B.; Lee, J. D.; Liu, T. K. (2007). "Tunneling Field-Effect
Transistors (
TFETs) With
Subthreshold Swing (SS) Less Than 60 mV/dec". IEEE
Electron Device...
-
William (2013-10-25). "Quantum
Transport for ****ure Nano-CMOS Applications :
TFETs and 2D
topological insulators" (PDF).
University of
Texas at Dallas. Retrieved...
- Com****tional
studies showed that
silicene based TFETs outperform traditional silicon based MOSFETs.
Silicene TFETs have an on-state
current over 1mA/μm, a sub-threshold...
-
Nanotechnology recognised their paper on
tunnel field-effect
transistor (
TFET)-based
biosensor published in
Applied Physics Letters in as one of the highlight...
-
quantum well
structure formed by
graded doping of the
active region. The
TFET (tunnel field-effect transistor) is
based on band-to-band tunneling. The...
- Pandey, and
Rajat Vishnoi (November 2016).
Tunnel Field-effect
Transistors (
TFET):
Modelling and Simulation. Wiley, UK
Mamidala Jagadesh Kumar and Sneh Saurabh...
- ****ociation
maintains the
Trust Fund for East
Timor in Timor-Leste. The
TFET has ****isted reconstruction,
community empowerment and
local governance in...
