- the
International Bureau of
Weights and Measures; SI symbol: nm), or
nanometer (American spelling), is a unit of
length in the
International System of...
- is
expected to have a
contacted gate
pitch of 45
nanometers and a
tightest metal pitch of 20
nanometers. As such, 2 nm is used
primarily as a marketing...
- gate length,
metal pitch or gate
pitch on a "14nm"
device is
fourteen nanometers. For example, TSMC and Samsung's "10 nm"
processes are
somewhere between...
- The term die
shrink (sometimes
optical shrink or
process shrink)
refers to the
scaling of metal–oxide–semiconductor (MOS) devices. The act of shrinking...
- The 350
nanometer process (350 nm process) is a
level of
semiconductor process technology that was
reached in the 1995–1996
timeframe by
leading semiconductor...
-
manufacturing to
create integrated circuits with a
minimum feature size of 90
nanometers. It was an
advancement over the
previous 130 nm process. Eventually, it...
- The 600
nanometer process (600 nm process) is a
level of
semiconductor process technology that was
reached in the 1994–1995 timeframe, by most leading...
-
other circuit elements on a chip made with this
process were
around 800
nanometers wide. 50-MHz i486DX CPU
launched in 1991 was
manufactured using this process...
-
expected to have a
contacted gate
pitch of 48
nanometers, and a
tightest metal pitch of 24
nanometers. However, in real
world commercial practice, 3nm...
- as gate length,
metal pitch or gate pitch) of the
transistors is five
nanometers in size. Historically, the
number used in the name of a
technology node...
