- and
extraordinary magnetoresistance (EMR) can be observed. The
first magnetoresistive effect was
discovered in 1856 by
William Thomson,
better known as Lord...
- thin-film head
element for reading. The
separate read
element uses the
magnetoresistive (MR)
effect which changes the
resistance of a
material in the presence...
-
Magnetoresistive random-access
memory (MRAM) is a type of non-volatile random-access
memory which stores data in
magnetic domains.
Developed in the mid-1980s...
- memories), single-cycle
write speeds, and
gamma radiation tolerance.
Magnetoresistive RAM
stores data in
magnetic storage elements called magnetic tunnel...
- (MEMS) and
other devices. GMR
multilayer structures are also used in
magnetoresistive random-access
memory (MRAM) as
cells that
store one bit of information...
- and Fujitsu.
Another approach to see
major development effort is
magnetoresistive random-access memory, or MRAM,
which uses
magnetic elements and in...
-
modern non
contact TPS
include Hall
effect sensors,
inductive sensors,
magnetoresistive and others. In the
potentiometric type sensors, a multi-finger metal...
-
Magnetoresistive level sensor...
- platter.
Later development made use of spintronics; in read heads, the
magnetoresistive effect was much
greater than in
earlier types, and was
dubbed "giant"...
-
Tunnel magnetoresistance (TMR) is a
magnetoresistive effect that
occurs in a
magnetic tunnel junction (MTJ),
which is a
component consisting of two ferromagnets...
