-
Metalorganic vapour-phase
epitaxy (
MOVPE), also
known as
organometallic vapour-phase
epitaxy (OMVPE) or
metalorganic chemical vapour deposition (MOCVD)...
-
trimethylgallium and arsine) and
industrial hygiene monitoring studies of
standard MOVPE sources have been
reported recently in a review. Shenai-Khatkhate, D. V...
- used a thin film of GaN
deposited via
metalorganic vapour-phase
epitaxy (
MOVPE) on sapphire.
Other substrates used are zinc oxide, with
lattice constant...
-
trimethylgallium and ammonia) and
industrial hygiene monitoring studies of
standard MOVPE sources have been
reported recently in a review.
Growth and Characterization...
-
chemistry of the
source gases, such as
hydride VPE (HVPE) and
metalorganic VPE (
MOVPE or MOCVD). The
reaction chamber where this
process takes place may be heated...
- have been
examined as less
hazardous liquid alternatives to
germane for
MOVPE deposition of Ge-containing
films such as high
purity Ge, SiGe, and strained...
- in the
semiconductor industry for the
epitaxial growth of
germanium by
MOVPE or
chemical beam epitaxy.
Organogermanium precursors (e.g. isobutylgermane...
- TMA is the
preferred precursor for
metalorganic vapour phase epitaxy (
MOVPE) of aluminium-containing
compound semiconductors, such as AlAs, AlN, AlP...
-
pressure equation and film
properties with
trimethylindium purity for the
MOVPE grown III–V compounds".
Journal of
Crystal Growth. 248: 91–98. Bibcode:2003JCrGr...
- molecular-beam
epitaxy (MBE) or
using metalorganic vapor-phase
epitaxy (
MOVPE).
Because GaAs and AlAs have
almost the same
lattice constant, the layers...
