-
Indium gallium ****nide (
InGaAs) (alternatively
gallium indium ****nide, GaInAs) is a
ternary alloy (chemical compound) of
indium ****nide (InAs) and gallium...
- gain-bandwidth
product in
excess of 100 GHz for a
simple InP/
InGaAs system, and up to 400 GHz for
InGaAs on silicon. Therefore, high-speed
operation is possible:...
-
material is
indium gallium ****nide, or
InGaAs.
Compared to
their silicon and
germanium counterparts,
InGaAs transistors are more
promising for ****ure...
-
compositions (heterostructures) for
HEMTs include AlGaN/GaN, AlGaAs/GaAs,
InGaAs/GaAs, and Si/SiGe. The
advantages of
HEMTs over
other transistor architectures...
- game industry, a live-service game (also
referred to as
games as a
service (
GaaS))
represents providing video games or game
content on a
continuing revenue...
- Semiconductors, e.g.
gallium ****nide (GaAs),
indium gallium ****nide (
InGaAs), or
gallium nitride (GaN). Liquids, in the form of dye
solutions as used...
-
including silicon, germanium,
germanium on
silicon and III-V
elements such as
InGaAs/InP have been used to
fabricate SPADs for the
large variety of applications...
- Vermeiren; B. Grietens; O. David; A. Shurkun; R. Schneider. "FLIP
CHIPPED InGAaS PHOTODIODE ARRAYS FOR
GATED IMAGING WITH EYE-SAFE LASERS" (PDF). {{cite...
- 1016/s1369-7021(08)70016-6. M.Suzuki and M.
Tonouchi (2005). "Fe-implanted
InGaAs terahertz emitters for 1.56 μm
wavelength excitation".
Applied Physics Letters...
- ****nide (
InGaAs) is a
compound III-V semiconductor. It can be
applied in two ways for use in TPVs. When lattice-matched to an InP substrate,
InGaAs has a...
