-
Indium gallium ****nide (
InGaAs) (alternatively
gallium indium ****nide, GaInAs) is a
ternary alloy (chemical compound) of
indium ****nide (InAs) and gallium...
- gain-bandwidth
product in
excess of 100 GHz for a
simple InP/
InGaAs system, and up to 400 GHz for
InGaAs on silicon. Therefore, high-speed
operation is possible:...
- In the
video game industry,
games as a
service (
GaaS) (also
referred to as a live
service game)
represents providing video games or game
content on a continuing...
-
compositions (heterostructures) for
HEMTs include AlGaN/GaN, AlGaAs/GaAs,
InGaAs/GaAs, and Si/SiGe. The
advantages of
HEMTs over
other transistor architectures...
-
microservices applications. Look up
GaaS in Wiktionary, the free dictionary. In the
video game industry,
games as a
service (
GaaS) (also
referred to as a live...
-
material is
indium gallium ****nide, or
InGaAs.
Compared to
their silicon and
germanium counterparts,
InGaAs transistors are more
promising for ****ure...
- 710 GHz.
Besides being record breakers in
terms of speed, HBTs made of InP/
InGaAs are
ideal for
monolithic optoelectronic integrated circuits. A PIN-type...
- Vermeiren; B. Grietens; O. David; A. Shurkun; R. Schneider. "FLIP
CHIPPED InGAaS PHOTODIODE ARRAYS FOR
GATED IMAGING WITH EYE-SAFE LASERS" (PDF). {{cite...
- Semiconductors, e.g.
gallium ****nide (GaAs),
indium gallium ****nide (
InGaAs), or
gallium nitride (GaN). Liquids, in the form of dye
solutions as used...
- Ion Back
Bombardment is one of the main
cause of GaAs
cathode QE decay.
InGaAs (indium
gallium ****nide).
Extended sensitivity in the
infrared range compared...
