- of
chemical vapor deposition (CVD) of silane,
hydrogen and nitrogen.
Homoepitaxial and
heteroepitaxial SiC
layers can be
grown employing both gas and liquid...
- ; Kawarada, H.; Tachiki, M. (2007). "Superconducting
properties of
homoepitaxial CVD diamond".
Diamond and
Related Materials. 16 (4–7): 911. Bibcode:2007DRM...
-
rather than thermodynamics, and 2D step-flow
growth becomes dominant.
Homoepitaxial growth of
semiconductor thin
films are
generally done by
chemical or...
-
experimental white light LEDs used no
phosphors at all and was
based on
homoepitaxially grown zinc
selenide (ZnSe) on a ZnSe
substrate that simultaneously...
- Ishii, S.; Ueda, S.; et al. (2007). "Superconducting
properties of
homoepitaxial CVD diamond".
Diamond and
Related Materials. 16 (4–7): 911–914. Bibcode:2007DRM...
-
critical magnetic field Bc = 4 T. Later, Tc ≈ 11 K has been
achieved in
homoepitaxial CVD films.
Regarding the
origin of
superconductivity in diamond, three...
- (Figure 2). Thus, the top and the side
walls of
these columns act as
homoepitaxial seed layers,
which act as
crytallographic templates for the subsequent...
-
heteroepitaxially on
substrates such as sapphire, GaN, SiC, and Si, as well as
homoepitaxially. For example, ALD on
sapphire substrates at
temperatures between 190 °C...
- J.C.; Gombia, E.; Pelosi, C.; Peng, R.W. (2008). "MOVPE
growth of
homoepitaxial germanium".
Journal of
Crystal Growth. 310 (14): 3282. Bibcode:2008JCrGr...
- J.; Vohra, Y. K. (2000). "Nitrogen
incorporation in
diamond films homoepitaxially grown by
chemical vapour deposition".
Journal of Physics: Condensed...
