-
transistors (
HFETs) the gate
leakage is
usually attributed to the high
density of
traps residing within the barrier. The gate
leakage of GaN
HFETs has been...
- high-electron-mobility
transistor (HEMT or HEM FET), also
known as
heterostructure FET (
HFET) or modulation-doped FET (MODFET), is a field-effect
transistor incorporating...
- junction. These, and the
HEMTs (high-electron-mobility transistors, or
HFETs), in
which a two-dimensional
electron gas with very high
carrier mobility...
-
Another seemingly viable solution for
realizing enhancement-mode GaN-channel
HFETs is to
employ a lattice-matched
quaternary AlInGaN layer of
acceptably low...
- diodes,
bipolar transistors,
MOSFETs (both bulk and SOI), MESFETs,
JFETs and
HFETs. Ng****e
supports parametric netlists (i.e.
netlists can
contain parameters...
- 5-cycle city and
highway fuel
economy values derived from just the FTP and
HFET tests, with
lower uncertainty for fuel
efficient vehicles.
Following the...
-
December 2022.
Measurement of
temperature in
active high-power AlGaN/GaN
HFETs using Raman spectroscopy M Kuball, JM Hayes, MJ Uren, I Martin, JCH Birbeck...
-
electric field. The HEMT (high-electron-mobility transistor), also
called a
HFET (heterostructure FET), can be made
using bandgap engineering in a ternary...
- Amplifiers. High-performance
Integrated Power Switches and
MOSFET drivers:
HFET 1,
GreenFET 3,
GreenFET 1, CurrentPAK. 32.768 kHz and MHz clocks: GreenCLK...
- Samit; Nicholson,
Theodore R.; Lee,
Stephen C.; Lu, Wu (2011). "AlGaN/GaN
HFET biosensors working at
subthreshold regime for
sensitivity enhancement". Physica...
