- Al
N AlP Al
GaN Al
GaP Al
GaAs Al
GaSb Al
GaInP
AlInSb GaSb
GaAsP
Ga****b
GaAs
GaN GaP
InAlAs InAlP InSb In
GaSb In
GaN GaInAlAs
GaInAl
N GaInAsN GaInAsP
GaInAs...
-
Gallium nitride (
GaN) is a
binary III/V
direct bandgap semiconductor commonly used in blue light-emitting
diodes since the 1990s. The
compound is a very...
-
gallium nitride (Al
GaN) is a
semiconductor material. It is any
alloy of
aluminium nitride and
gallium nitride. The
bandgap of AlxGa1−x
N can be
tailored from...
-
Indium gallium nitride (In
GaN, InxGa1−x
N) is a
semiconductor material made of a mix of
gallium nitride (
GaN) and
indium nitride (In
N). It is a
ternary group...
-
Indium gallium aluminium nitride (In
GaAl
N, AlIn
GaN) is a
GaN-based
compound semiconductor. It is
usually prepared by
epitaxial growth methods such as metalorganic...
-
Gallium is a
chemical element; it has the
symbol Ga and
atomic number 31.
Discovered by the
French chemist Paul-Émile
Lecoq de
Boisbaudran in 1875, elemental...
- The
Ga-Dangbe,
Ga-Dangme,
Ga-Adangme or
Ga-Adangbe are an
ethnic group in Ghana, Togo and Benin. The
Ga or Gan and
Dangbe or
Dangme people are grouped...
-
constructed on a
GaAs substrate. By
October 1961, they had
demonstrated efficient light emission and
signal coupling between a
GaAs p-
n junction light emitter...
- Moon
Ga-young (Korean: 문가영; born July 10, 1996) is a
South Korean actress and model. In 2005, she
started on her
career as a
child model. The following...
- of deep UV lithography, dry etch, and
atomic layer deposition (ALD). In
GaN/
GaN nanorod array light-emitting
diodes can be
manufactured with dry etching...
