-
several 16 nm
FinFETs die-on
wafers manufacturing processes: 16 nm
FinFET (Q4 2014), 16 nm
FinFET+ (cca[clarify] Q4 2014), 16 nm
FinFET "Turbo" (estimated...
- have been
given the
generic name "
FinFETs"
because the source/drain
region forms fins on the
silicon surface. The
FinFET devices have
significantly faster...
-
either side of the fin
separates it from the gate. SOI
FinFETs with a
thick oxide on top of the
fin are
called double-gate and
those with a thin
oxide on...
- Bibcode:1967ITED...14...69F. doi:10.1109/T-ED.1967.15901. Colinge, J.P. (2008).
FinFETs and
Other Multi-Gate Transistors.
Springer Science &
Business Media. p...
-
covered in
their entirety by the same gate, just like
FinFETs usually have
several physical fins side by side that are
electrically a
single unit and are...
- of multi-gate
MOSFET technology,
while TSMC's 3 nm
process still uses
FinFET (
fin field-effect transistor) technology,
despite TSMC
developing GAAFET transistors...
- "Nanowires give
vertical transistors a boost". 2
August 2012. "What's
After FinFETs?". 24 July 2017. "Transistor
Options Beyond 3nm". 15
February 2018. Patterson...
- (ULL)) 20 nm 16 nm (options:
FinFET (FF),
FinFET Plus (FF+),
FinFET Compact (FFC)) 12 nm (options:
FinFET Compact (FFC),
FinFET Nvidia (FFN)),
enhanced version...
- EUV "The
Bumpy Road to 10nm
FinFETs". 21 May 2015.
Triple patterning is
becoming common at 10nm
Samsung announces 10nm
FinFET process for SoC "Semimd -...
- with "F"
suffixes are
without iGPUs.
Fabrication process: TSMC N5
FinFET (N6
FinFET for the I/O die). v t e Self
identifies as "AMD
Radeon Graphics"....
