- have been
given the
generic name "
FinFETs"
because the source/drain
region forms fins on the
silicon surface. The
FinFET devices have
significantly faster...
-
several 16 nm
FinFETs die-on
wafers manufacturing processes: 16 nm
FinFET (Q4 2014), 16 nm
FinFET+ (cca[clarify] Q4 2014), 16 nm
FinFET "Turbo" (estimated...
- Trivedi,
Vishal P. (2013).
Fundamentals of Ultra-Thin-Body
MOSFETs and
FinFETs.
Cambridge University Press. p. vii. ISBN 978-1-107-43449-3. Retrieved...
- redesigned.
Intel 18A is
using a
RibbonFET design to
reduce leakage.
Unlike FinFETs, both the
width and the
number of the
sheets can be
varied to
adjust drive...
- top of each other,
covered in
their entirety by the same gate, just like
FinFETs usually have
several physical fins side by side that are
electrically a...
- J.-W.; Jung, H.-A.-R.; Choi, B.-K. (2009). "Comparison of SOI
FinFETs and bulk
FinFETs:
Figure 2". Silicon-on-Insulator
Technology and Devices. The Electrochemical...
-
Computer History Museum.
Retrieved July 22, 2019. Colinge, J.P. (2008).
FinFETs and
Other Multi-Gate Transistors.
Springer Science &
Business Media. p...
-
complementary FET (CFET),
stacked FET,
vertical TFETs,
FinFETs with III-V
semiconductor materials (III-V
FinFET),
several kinds of
horizontal gate-all-around transistors...
- EUV "The
Bumpy Road to 10nm
FinFETs". 21 May 2015.
Triple patterning is
becoming common at 10nm
Samsung announces 10nm
FinFET process for SoC "Semimd -...
-
original (PDF) on 23
October 2016.
Retrieved 22
October 2016. "16nm/14nm
FinFETs:
Enabling The New
Electronics Frontier". electronicdesign.com. 17 January...
