- have been
given the
generic name "
FinFETs"
because the source/drain
region forms fins on the
silicon surface. The
FinFET devices have
significantly faster...
-
several 16 nm
FinFETs die-on
wafers manufacturing processes: 16 nm
FinFET (Q4 2014), 16 nm
FinFET+ (cca[clarify] Q4 2014), 16 nm
FinFET "Turbo" (estimated...
-
complementary FET (CFET),
stacked FET,
vertical TFETs,
FinFETs with III-V
semiconductor materials (III-V
FinFET),
several kinds of
horizontal gate-all-around transistors...
- Trivedi,
Vishal P. (2013).
Fundamentals of Ultra-Thin-Body
MOSFETs and
FinFETs.
Cambridge University Press. p. vii. ISBN 978-1-107-43449-3. Retrieved...
- top of each other,
covered in
their entirety by the same gate, just like
FinFETs usually have
several physical fins side by side that are
electrically a...
- J.-W.; Jung, H.-A.-R.; Choi, B.-K. (2009). "Comparison of SOI
FinFETs and bulk
FinFETs:
Figure 2". Silicon-on-Insulator
Technology and Devices. The Electrochemical...
- EUV "The
Bumpy Road to 10nm
FinFETs". 21 May 2015.
Triple patterning is
becoming common at 10nm
Samsung announces 10nm
FinFET process for SoC "Semimd -...
-
original (PDF) on 23
October 2016.
Retrieved 22
October 2016. "16nm/14nm
FinFETs:
Enabling The New
Electronics Frontier". electronicdesign.com. 17 January...
- Trivedi,
Vishal P. (2013).
Fundamentals of Ultra-Thin-Body
MOSFETs and
FinFETs.
Cambridge University Press. p. vii. ISBN 9781107434493. Malmstadt, Howard...
- on a chip such as
transistors moved from
planar to 3D structures, like
FinFETs in the past decade. ASM has a
leading position in
single wafer atomic layer...
