-
applications of
FGMOS was
digital semiconductor memory, to
store nonvolatile data in EPROM,
EEPROM and
flash memory. In 1989,
Intel emplo**** the
FGMOS as an analog...
- then
invented the floating-gate
MOSFET (
FGMOS) with
Simon Min Sze in 1967.
Kahng and Sze
proposed that
FGMOS could be used as floating-gate
memory cells...
- Depletion-load NMOS Fin field-effect
transistor (FinFET) Floating-gate
MOSFET (
FGMOS) Insulated-gate
bipolar transistor (IGBT)
ISFET LDMOS MOS field-effect transistor...
- Depletion-load NMOS Fin field-effect
transistor (FinFET) Floating-gate
MOSFET (
FGMOS) Insulated-gate
bipolar transistor (IGBT)
ISFET LDMOS MOS field-effect transistor...
-
MOSFET (
FGMOS) was
invented by
Dawon Kahng and
Simon Sze at Bell Labs in 1967. They
proposed the
concept of floating-gate
memory cells,
using FGMOS transistors...
-
amorphous silicon, LTPS, LTPO and IGZO
transistors Floating-gate
MOSFET (
FGMOS), for non-volatile
storage Power MOSFET, for
power electronics lateral diffused...
- Mead and
reported in 1966. The
first report of a floating-gate
MOSFET (
FGMOS) was made by
Dawon Kahng and
Simon Sze in 1967. The
MOSFET has
since become...
- Rodriguez-Villegas, E.; Barnes, H. (18
September 2003). "Solution to
trapped charge in
FGMOS transistors".
Electronics Letters. 39 (19): 1416–1417. Bibcode:2003ElL....
- Depletion-load NMOS Fin field-effect
transistor (FinFET) Floating-gate
MOSFET (
FGMOS) Insulated-gate
bipolar transistor (IGBT)
ISFET LDMOS MOS field-effect transistor...
- Depletion-load NMOS Fin field-effect
transistor (FinFET) Floating-gate
MOSFET (
FGMOS) Insulated-gate
bipolar transistor (IGBT)
ISFET LDMOS MOS field-effect transistor...
