- MOSFETs. The film is very thin in
FDSOI devices so that the
depletion region covers the
whole channel region. In
FDSOI the
front gate (GOX)
supports fewer...
-
system on a chip FPGA
devices using a
fully depleted silicon on
insulator (
FDSOI) 28nm chip
manufacturing process.
These are the
Cyclone V SoC devices, which...
- 3D-NoC
technology which combines small dies ("chiplets"),
fabricated at the
FDSOI 28 nm node, on a 65 nm CMOS interposer.
Another example of an interposer...
- non-volatile
memory was
reported as
having been
built at 22nm node
using FDSOI CMOS (fully
depleted silicon on insulator) with
hafnium dioxide (HfO2) as...
-
United States, Texas,
Austin 16 2011 300 65–11 92,000 Microprocessors,
FDSOI, Foundry, NAND
Samsung S1-Line
South Korea,
Giheung 33 (total) 2005 (second...
- facility. It is
capable of
manufacturing wafers at 40 nm, 28 nm BULK and 22 nm
FDSOI.
Module 2 was
originally named "(AMD) Fab 30" and was a 200 mm fab producing...
- Clarke, Peter. "RISC-V architecture,
Andes processor cores offered on
FDSOI".
eeNews Embedded. "Andes
certifies Imperas models and
simulator as reference...
- co-processor. It is
designed 28 nm
fully depleted silicon on
insulator (
FDSOI) process. Only low-powered
single and dual-core models,
designed for IoT...
-
tested and
characterized fully functional 1 Mb
ReRAM arrays in a 28 nm
FDSOI process on 300mm wafers.
Weebit demonstrated its
ReRAM IP
module publicly...
- Leti, produced,
tested and
characterized a 1 Mb
ReRAM array,
using a 28 nm
FDSOI process on 300mm wafers.
Crossbar implements an Ag
filament in amorphous...
