- to the
bitline—capacitor-over-
bitline (COB) and capacitor-under-
bitline (CUB). In a
former variation, the
capacitor is
underneath the
bitline,
which is...
- read from the memory; its role is to
sense the low
power signals from a
bitline that
represents a data bit (1 or 0)
stored in a
memory cell, and amplify...
-
application of an
appropriate voltage to the
control gate, so that the
bitline voltage is
pulled down. A NOR flash cell can be programmed, or set to a...
-
width provided by the user. P
bitlines = N col 2 ⋅ ( L col C wire + N row C cell ) V dd V
swing {\displaystyle P_{\text{
bitlines}}={\dfrac {N_{\text{col}}}{2}}\cdot...
- impedance, and a
greater need for
sense amplifiers (driven by
reduced bits per
bitline due to
lower voltage), have
significantly increased bandwidth but at the...
-
equally to the
nearby read
bitlines.
Because write bitlines are full swing, they can
cause significant disturbances on read
bitlines. If Vdd is a horizontal...
-
accesses to DRAM.
Typical DRAM
memory operations involve three phases:
bitline precharge, row access,
column access. Row
access is the
heart of a read...
- Soon
after the
company was launched,
Robert Harland invented the
folded bitline DRAM architecture, a
technique eventually adopted by the
entire DRAM industry...
- are
connected by
horizontal and
vertical control lines (wordlines and
bitlines) to
peripheral circuitry such as
address decoders and
sense amplifiers...
