- Dov
Frohman (Hebrew: דב פרוהמן, also Dov Frohman-
Bentchkowsky; born
March 28, 1939) is an
Israeli electrical engineer and
business executive. A former...
-
Trademark Office.
Archived from the
original on 2018-03-09. Frohman,
Bentchkowsky D (19
October 1973). "Electrically
alterable floating gate
device and...
- Cooper,
Margaret Hamilton,
Larry Roberts,
Cleve Moler 2018: Dov Frohman-
Bentchkowsky, Dame
Stephanie Shirley,
Guido van
Rossum 2019:
James Gosling, Katherine...
- "Electrically
programmable and
electrically erasable MOS
memory cell". Frohman-
Bentchkowsky, Dov; Mar, Jerry; Perlegos, George; Johnson,
William S. (15 December...
- "Electrically
programmable and
electrically erasable MOS
memory cell". Frohman-
Bentchkowsky, Dov; Mar, Jerry; Perlegos, George; Johnson,
William S. (15 December...
- Demonstrated". The
Silicon Engine.
Computer History Museum. US3660819A, Frohman,
Bentchkowsky D., "Floating gate
transistor and
method for
charging and discharging...
-
Lawrenson 2006:
Fawwaz T.
Ulaby 2007:
Russell Dupuis 2008: Dov Frohman-
Bentchkowsky 2009:
Tingye Li 2010: Ray
Dolby 2011:
Isamu Akasaki 2012:
Michael Francis...
-
Springer Science &
Business Media. p. 74. ISBN 9781489921604. Frohman-
Bentchkowsky, D. (1970). "The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics...
- Transistor". www.invent.org. June 4, 2024. "NIHF
Inductee Dov Frohman-
Bentchkowsky Invented EPROM". www.invent.org. June 4, 2024.
Archived from the original...
