-
Aluminium indium antimonide, also
known as
indium aluminium antimonide or
AlInSb (AlxIn1-x
Sb), is a
ternary III-V
semiconductor compound. It can be considered...
-
microwave frequencies.
AlSb can be
reacted with
other III-V
materials to
produce ternary materials including AlInSb,
AlGa
Sb and
AlAs
Sb.
Aluminium antimonide...
- (DEZ),
Liquid AlN
AlP
AlGaN
AlGaP
AlGaAs
AlGa
Sb AlGaInP
AlInSb Ga
Sb GaAsP GaAs
Sb GaAs GaN GaP In
AlAs In
AlP In
Sb InGa
Sb InGaN GaIn
AlAs GaIn
AlN
GaInAsN GaInAsP...
-
indium antimonide can act as a
quantum well. In such a
heterostructure In
Sb/
AlInSb has
recently been
shown to
exhibit a
robust quantum Hall effect. This...
- such as
aluminium gallium indium phosphide (
AlInGaP))
alloy and
Indium ****nide
antimonide phosphide (InAs
SbP). The
properties of III-V
compound semiconductors...
- it is in pure
AlAs and
AlSb.
AlAs
Sb shares the same
zincblende crystal structure as
AlAs and
AlSb.
AlAs
Sb can be lattice-matched to Ga
Sb, InAs and InP...
-
gallium antimonide, also
known as
gallium aluminium antimonide or
AlGa
Sb (AlxGa1-x
Sb), is a
ternary III-V
semiconductor compound. It can be considered...
- Leuther, A. (2011). "Molecular beam
epitaxial growth of
metamorphic AlInSb/GaIn
Sb high-electron-mobility-transistor
structures on GaAs
substrates for...
- et
al" (PDF).
sb.judiciary.gov. Sandiganbayan,
Philippine Judiciary.
Retrieved November 16, 2023. "Decision,
Republic v.
Corona et
al" (PDF).
sb.judiciary...
-
investigation of the flow of bile in
patient specific cystic duct
models M
Al-Atabi,
SB Chin...,
Journal of
biomechanical engineering, 2010
Channa NA, Khand...