-
Aluminium gallium indium phosphide (
AlGaIn
P, also
AlInGaP, In
GaAlP, etc.) is a
semiconductor material that
provides a
platform for the
development of multi-junction...
- Lumileds, over the use of
AlInGaP LED technology. However, in September, 2009,
Philips Lumileds signed an
agreement to
license AlInGaP technology to Epistar...
-
Epistar over the use of
AlInGaP LED technology. However, in September, 2009,
Philips Lumileds signed an
agreement to
license AlInGaP technology to Epistar...
- aluminium-containing
compound semiconductors, such as
AlAs,
AlN,
AlP,
AlSb,
AlGaAs,
AlIn
GaAs,
AlInGaP,
AlGaN,
AlIn
GaN,
AlIn
GaNP, etc.
Criteria for TMA
quality focus...
- his
group developed nitrogen-doped
GaAs
P, and at HP
pioneered development of
AlInGaP LEDs and
developed AlGaAs and In
GaN products. More recently, his team...
- such as
aluminium gallium indium phosphide (
AlInGaP))
alloy and
Indium ****nide
antimonide phosphide (In****b
P). The
properties of III-V
compound semiconductors...
- and
heavy holes in Silicon, Germanium,
GaAs, InSb,
AlSb,
AlAs, AlxInxSb, AlxIn(1-x)Sb,
AlP,
AlSb,
GaP,
GaSb, In
P and
their compounds (III-V semiconductor...
-
Indium gallium phosphide (In
GaP), also
called gallium indium phosphide (
GaIn
P), is a
semiconductor composed of indium,
gallium and phosphorus. It is used...
-
Aluminium gallium phosphide, (
Al,
Ga)
P, a
phosphide of
aluminium and gallium, is a
semiconductor material. It is an
alloy of
aluminium phosphide and gallium...
-
constant as
GaAs, but a
larger bandgap. The x in the
formula above is a
number between 0 and 1 - this
indicates an
arbitrary alloy between GaAs and
AlAs. The...
