-
AlGaN/
GaN High-electron-mobility transistors.
AlGaN is
often used
together with
gallium nitride or
aluminium nitride,
forming heterojunctions.
AlGaN layers...
- 50 μm, respectively).
GaN-based
violet laser diodes are used to read Blu-ray Discs. The
mixture of
GaN with In (In
GaN) or
Al (
AlGaN) with a band gap dependent...
-
Aluminium gallium nitride (
AlGaN), a
semiconductor material This
disambiguation page
lists articles ****ociated with the
title Algan. If an
internal link led...
-
induced by
spontaneous and
piezoelectric polarization in
undoped and
doped AlGaN/
GaN heterostructures".
Journal of
Applied Physics. 87 (1): 334–344. Bibcode:2000****...
-
built from
GaN with In
GaN active layers. In
GaN can be
combined with
other materials, e.g.
GaN,
AlGaN, on SiC,
sapphire and even silicon. In
GaN nanorod LEDs...
-
efficiency too low for high-brightness applications.[citation needed] With
AlGaN and
AlGaIn
N, even
shorter wavelengths are achievable. Near-UV
emitters at wavelengths...
-
invented the
first blue
semiconductor LED
using an In
GaN active region,
GaN optical guide and
AlGaN cladding, and four
years later, the
first low-power...
-
heterojunction layer compositions (heterostructures) for
HEMTs include AlGaN/
GaN,
AlGaAs/
GaAs, In
GaAs/
GaAs, and Si/SiGe. The
advantages of
HEMTs over
other transistor...
-
photoinduced entropy (i.e.
thermodynamic disorder) of In
GaN/
GaN p-i-
n double-heterostructure and
AlGaN nanowires using temperature-dependent photoluminescence...
- Ayla
Algan (née Kasman; 29
October 1937 – 4
January 2024) was a
Turkish film and
stage actress and singer.
Algan appeared on the
stage for the
first time...
